US 9,810,988 B2
Composition for forming overlay film, and resist pattern formation method employing the same
Xiaowei Wang, Shizuoka (JP); Masato Suzuki, Shizuoka (JP); Tetsuo Okayasu, Shizuoka (JP); and Georg Pawlowski, Shizuoka (JP)
Assigned to AZ Electronic Material (Luxembourg) S.ár.l., Luxembourg (LU)
Appl. No. 14/652,667
Filed by AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L., Somerville, NJ (US)
PCT Filed Dec. 12, 2013, PCT No. PCT/JP2013/083319
§ 371(c)(1), (2) Date Jun. 16, 2015,
PCT Pub. No. WO2014/092149, PCT Pub. Date Jun. 19, 2014.
Claims priority of application No. 2012-272516 (JP), filed on Dec. 13, 2012.
Prior Publication US 2015/0331323 A1, Nov. 19, 2015
Int. Cl. G03F 7/20 (2006.01); G03F 7/11 (2006.01); C09D 1/00 (2006.01); C09D 125/06 (2006.01); C09D 129/04 (2006.01); C09D 133/02 (2006.01); C09D 165/00 (2006.01); G03F 7/09 (2006.01)
CPC G03F 7/2002 (2013.01) [C09D 1/00 (2013.01); C09D 125/06 (2013.01); C09D 129/04 (2013.01); C09D 133/02 (2013.01); C09D 165/00 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01)] 15 Claims
 
1. A composition for forming a topcoat layer, comprising of a solvent, a polymer, a fullerene derivative having a phenolic hydroxyl group, wherein the phenolic hydroxyl group is selected from the group consisting of

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12. A pattern formation method comprising the steps of:
casting a resist composition on a substrate, to form a resist layer,
coating the resist layer with a composition for forming a topcoat layer wherein said composition for forming a topcoat layer comprises a solvent, a polymer, a fullerene derivative having a phenolic hydroxyl group, wherein the phenolic hydroxyl group is selected from the group consisting of

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heating to harden the composition on the resist layer,
subjecting the resist layer to exposure by use of extreme UV light, and
developing the exposed resist layer with an alkali aqueous solution.