US 9,810,980 B1
Graphoepitaxy directed self assembly
Hongyun Cottle, Schenectady, NY (US); Cheng Chi, Jersey City, NJ (US); Chi-Chun Liu, Altamont, NY (US); and Kristin Schmidt, Mountain View, CA (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US); and TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US); and TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Feb. 7, 2017, as Appl. No. 15/426,523.
Application 15/426,523 is a continuation of application No. 15/291,689, filed on Oct. 12, 2016, granted, now 9,632,408.
This patent is subject to a terminal disclaimer.
Int. Cl. C03C 15/00 (2006.01); G03F 7/00 (2006.01); C30B 1/04 (2006.01); C30B 29/58 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01)
CPC G03F 7/0002 (2013.01) [C30B 1/04 (2013.01); C30B 29/58 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/31058 (2013.01); H01L 21/31133 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A graphoepitaxy directed self-assembly method comprising:
grafting a monolayer of a brush polymer material onto a substrate;
applying a layer of sacrificial material over the grafted monolayer of the brush polymer material, wherein the layer of sacrificial material is not crosslinked;
etching the substrate to selectively remove portions of the layers of the sacrificial material and the brush polymer material therefrom;
removing a remaining portion of the layer of sacrificial material with a solvent; and
coating a block copolymer onto the substrate and annealing to direct self-assembly of the block copolymer on a remaining portion of the layer of the brush polymer material.