US 9,810,978 B2
Method for lithography patterning
Hsun-Chuan Shih, Hsinchu County (TW); and Yuan-Chih Chu, New Taipei (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Feb. 29, 2016, as Appl. No. 15/56,259.
Application 15/056,259 is a continuation of application No. 14/030,926, filed on Sep. 18, 2013, granted, now 9,274,417.
Prior Publication US 2016/0178996 A1, Jun. 23, 2016
Int. Cl. G03F 1/24 (2012.01); G03F 1/72 (2012.01); G03F 1/22 (2012.01); G03F 1/80 (2012.01); G03F 1/84 (2012.01)
CPC G03F 1/22 (2013.01) [G03F 1/72 (2013.01); G03F 1/80 (2013.01); G03F 1/84 (2013.01)] 20 Claims
OG exemplary drawing
1. A EUV mask, comprising:
a low thermal expansion material (LTEM) substrate;
a reflective multi-layer (ML) over the LTEM substrate, wherein the reflective ML includes a defect;
a patterned absorber layer over the reflective ML; and
a mark associated with the defect, wherein the mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect from a top view, and a cavity into the patterned absorber layer.