US 9,810,794 B2
Fabricating radiation-detecting structures
Rajendra P. Dahal, Troy, NY (US); Ishwara B. Bhat, Clifton Park, NY (US); Yaron Danon, Selkirk, NY (US); and James Jian-Qiang Lu, Watervliet, NY (US)
Assigned to RENSSELAER POLYTECHNIC INSTITUTE, Troy, NY (US)
Appl. No. 15/319,965
Filed by RENSSELAER POLYTECHNIC INSTITUTE, Troy, NY (US)
PCT Filed Jun. 22, 2015, PCT No. PCT/US2015/036921
§ 371(c)(1), (2) Date Dec. 19, 2016,
PCT Pub. No. WO2016/053413, PCT Pub. Date Apr. 7, 2016.
Claims priority of provisional application 62/015,573, filed on Jun. 23, 2014.
Prior Publication US 2017/0139060 A1, May 18, 2017
Int. Cl. H01L 21/00 (2006.01); G01T 1/24 (2006.01); G01T 3/08 (2006.01); H01L 31/115 (2006.01); H01L 31/18 (2006.01)
CPC G01T 1/24 (2013.01) [G01T 3/08 (2013.01); H01L 31/115 (2013.01); H01L 31/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
fabricating a radiation-detecting structure, the fabricating comprising:
providing a semiconductor substrate, the semiconductor substrate comprising a plurality of cavities extending into the semiconductor substrate from a surface thereof; and
electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, wherein the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles.