US 9,810,746 B2
Magnetic sensor
Kentaro Fukai, Chiba (JP); Minoru Ariyama, Chiba (JP); Tomoki Hikichi, Chiba (JP); and Takemasa Miura, Chiba (JP)
Assigned to SII Semiconductor Corporation, (JP)
Filed by Seiko Instruments Inc., Chiba-shi, Chiba (JP)
Filed on Jun. 18, 2015, as Appl. No. 14/742,940.
Claims priority of application No. 2014-133275 (JP), filed on Jun. 27, 2014.
Prior Publication US 2015/0377647 A1, Dec. 31, 2015
Int. Cl. G01R 33/07 (2006.01); G01R 33/00 (2006.01)
CPC G01R 33/07 (2013.01) [G01R 33/0029 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A magnetic sensor, comprising:
a magnetoelectric transducing element having first and second drive electrodes, and first and second output electrodes;
a constant current circuit which supplies a drive current to the first drive electrode of the magnetoelectric transducing element;
a signal processing circuit which is connected with the first and second output electrodes of the magnetoelectric transducing element and which processes an output signal of the magnetoelectric transducing element;
a reference current circuit which generates a reference current and supplies an I/V-converted bias voltage to the signal processing circuit; and
shunt electrically connected in parallel with the reference current circuit,
said reference current circuit and said shunt are configured as a parallel circuit having a positive-side power supply electrode connected to the second drive electrode of the magnetoelectric transducing element and being electrically connected in series with the constant current circuit and the magnetoelectric transducing element, and
said signal processing circuit being driven by a voltage source.