US 9,810,745 B2
Integrated dual axis fluxgate sensor using double deposition of magnetic material
Anuraag Mohan, Fremont, CA (US); Dok Won Lee, Mountain View, CA (US); William French, San Jose, CA (US); and Erika L. Mazotti, San Martin, CA (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Feb. 10, 2017, as Appl. No. 15/429,388.
Application 15/171,615 is a division of application No. 14/286,517, filed on May 23, 2014, granted, now 9,383,418, issued on Jul. 5, 2016.
Application 15/429,388 is a continuation of application No. 15/171,615, filed on Jun. 2, 2016, granted, now 9,606,193.
Prior Publication US 2017/0153299 A1, Jun. 1, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 43/02 (2006.01); H01L 29/26 (2006.01); H01L 43/12 (2006.01); G01R 33/04 (2006.01); G01R 33/09 (2006.01); H01L 43/00 (2006.01); H01L 43/10 (2006.01); G01R 33/00 (2006.01)
CPC G01R 33/04 (2013.01) [G01R 33/0052 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of forming an Integrated Dual Axis Fluxgate Sensor, comprising:
forming a first SiN layer on a surface of a processed semiconductor substrate;
forming a first TetraEthyl OrthoSilicate (TEOS) layer to define a form for a bottom layer of a coil;
forming a first copper conductor layer in the first TEOS form to form the bottom layer of the coil;
forming a second SiN layer overlaying the first TEOS layer and the first copper conductor layer;
forming a second TEOS layer overlaying and touching the second SiN layer and forming a third SiN layer overlaying the second TEOS layer;
forming a titanium layer overlaying and touching the third SiN layer;
forming a laminated magnetic core structure over the titanium layer;
forming a third TEOS layer overlying the third SiN layer, the bottom layer of the coil and the laminated magnetic core structure, wherein the third TEOS layer defines a form for a plurality of openings to the bottom layer of the coil;
forming a second copper conductor layer in the plurality of openings to form vias touching and coupling to the bottom layer of the coil;
forming a third copper layer to form the top layer of the coil wherein the third copper layer connects to the vias thereby coupling the top layer of the coil to the bottom layer of the coil; and
forming a passivation layer touching the third TEOS layer and the top surface of the top layer of coil, wherein the passivation layer includes openings to the top layer of the coil.