US 9,810,689 B2
Signal enhancement mechanism for dual-gate ion sensitive field effect transistor in on-chip disease diagnostic platform
Ching-Hui Lin, Tiachung (TW); Chun-Ren Cheng, Hsin-Chu (TW); Shih-Fen Huang, Jhubei (TW); and Yi-Hsien Chang, Changhua County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 28, 2017, as Appl. No. 15/581,673.
Application 15/581,673 is a continuation in part of application No. 15/356,503, filed on Nov. 18, 2016.
Application 15/356,503 is a continuation in part of application No. 13/831,106, filed on Mar. 14, 2013, granted, now 9,689,835.
Application 13/831,106 is a continuation in part of application No. 13/480,161, filed on May 24, 2012, granted, now 9,459,234, issued on Oct. 4, 2016.
Claims priority of provisional application 61/553,606, filed on Oct. 31, 2011.
Prior Publication US 2017/0227533 A1, Aug. 10, 2017
Int. Cl. H01L 51/05 (2006.01); G01N 27/414 (2006.01); G01N 33/543 (2006.01); H01L 29/78 (2006.01); C12Q 1/00 (2006.01); H01L 51/00 (2006.01); H01L 29/66 (2006.01)
CPC G01N 33/5438 (2013.01) [C12Q 1/006 (2013.01); G01N 27/414 (2013.01); G01N 27/4145 (2013.01); G01N 27/4148 (2013.01); H01L 29/66484 (2013.01); H01L 29/7831 (2013.01); H01L 29/7832 (2013.01); H01L 51/0093 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A dual-gate ion-sensitive field effect transistor (ISFET) for analyzing a biological sample, the dual-gate ISFET comprising:
a device substrate having a first surface and a second surface, the first surface opposite the second surface;
a gate structure disposed over the first surface between a source region and a drain region in the device substrate, wherein a channel region is defined in the device substrate between the source region and the drain region;
a fluidic gate structure disposed over the second surface, wherein the fluidic gate structure includes a sensing well disposed over the channel region, the sensing well including a sensing layer and an electrolyte solution; and
wherein the dual-gate ISFET is configured to generate an electrical signal when the sensing layer reacts with an ion generated from an enzymatic reaction that occurs when an enzyme-modified detection mechanism detects a target analyte and an ion generated from a reaction between a product of the enzymatic reaction and a constituent of the electrolyte solution, the electrical signal indicating an ion concentration in the electrolyte solution that correlates with a presence or a quantity of target analytes in the biological sample.