US 9,810,660 B2
Fin-FET sensor with improved sensitivity and specificity
Wenchuang Hu, Allen, TX (US); Ruhai Tian, Irving, TX (US); Suresh Regonda, Richardson, TX (US); and Krutarth B. Trivedi, Plano, TX (US)
Assigned to THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US)
Appl. No. 13/876,958
Filed by Wenchuang Hu, Allen, TX (US); Ruhai Tian, Irving, TX (US); Suresh Regonda, Richardson, TX (US); and Krutarth B. Trivedi, Plano, TX (US)
PCT Filed Sep. 28, 2011, PCT No. PCT/US2011/053631
§ 371(c)(1), (2), (4) Date Jun. 16, 2013,
PCT Pub. No. WO2012/050873, PCT Pub. Date Apr. 19, 2012.
Claims priority of provisional application 61/387,903, filed on Sep. 29, 2010.
Prior Publication US 2013/0291627 A1, Nov. 7, 2013
Int. Cl. H01L 29/76 (2006.01); G01N 27/403 (2006.01); G01N 15/06 (2006.01); G01N 27/414 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01)
CPC G01N 27/4145 (2013.01) [G01N 27/4146 (2013.01); H01L 27/1211 (2013.01); H01L 29/785 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A finFET biosensor, comprising:
a semiconductor layer on a silicon-on-insulator (SOI) substrate;
a transistor source;
a transistor drain;
one or more finFET nanochannels formed in said semiconductor layer, wherein said nanochannels connect said transistor source and said transistor drain;
a gate dielectric covering a portion of said one or more nanochannels;
a sample channel; and
a sensor region further comprising a sensor molecule, wherein said sensor molecule is coupled to said gate dielectric, and further wherein the sensor region is located within the sample channel.