US 9,809,903 B2
Methods for top-down fabrication of wafer scale TMDC monolayers
Saptarshi Das, State College, PA (US); Mrinal K. Bera, Grenoble (FR); Andreas K. Roelofs, Wheaton, IL (US); and Mark Antonio, Naperville, IL (US)
Assigned to UChicago Argonne, LLC, Chicago, IL (US)
Filed by UChicago Argonne, LLC, Chicago, IL (US)
Filed on Mar. 4, 2016, as Appl. No. 15/61,696.
Prior Publication US 2017/0253996 A1, Sep. 7, 2017
Int. Cl. C25F 5/00 (2006.01); C30B 33/10 (2006.01); C25F 3/02 (2006.01); C30B 29/46 (2006.01); C30B 33/04 (2006.01)
CPC C30B 33/10 (2013.01) [C25F 3/02 (2013.01); C30B 29/46 (2013.01); C30B 33/04 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of forming a TMDC monolayer, comprising:
providing a multi-layer transition metal dichalcogenide (TMDC) film, the multi-layer TMDC film comprising a plurality of layers of the TMDC;
positioning the multi-layer TMDC film on a conducting substrate;
contacting the conducting substrate and the multi-layer TMDC film with an electrolyte solution;
applying a predetermined electrode potential on the conducting substrate for a predetermined time; and
removing, by application of the predetermined electrode potential, a portion of the plurality of layers of the TMDC included in the multi-layer TMDC film, thereby leaving a TMDC monolayer film positioned on the conducting substrate.