US 9,809,901 B2
Method for manufacturing silicon single crystal
Satoshi Soeta, Fukui (JP); Shinji Nakano, Minami-echizen-cho (JP); and Kouichi Ikeda, Echizen (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 15/27,414
PCT Filed Oct. 16, 2014, PCT No. PCT/JP2014/005246
§ 371(c)(1), (2) Date Apr. 5, 2016,
PCT Pub. No. WO2015/075864, PCT Pub. Date May 28, 2015.
Claims priority of application No. 2013-242034 (JP), filed on Nov. 22, 2013.
Prior Publication US 2016/0237589 A1, Aug. 18, 2016
Int. Cl. C30B 15/20 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01); C30B 15/14 (2006.01)
CPC C30B 15/203 (2013.01) [C30B 15/04 (2013.01); C30B 15/14 (2013.01); C30B 15/206 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01)] 20 Claims
OG exemplary drawing
1. A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, comprising the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein
a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt.