US 9,809,891 B2
Plating method
Matthew A. Thorseth, West Minster, MA (US); Mark A. Scalisi, Salem, NH (US); Luis A. Gomez, Holden, MA (US); Bryan Lieb, Carlisle, MA (US); Rebecca Lea Hazebrouck, Salem, NH (US); and Mark Lefebvre, Hudson, NH (US)
Assigned to Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed by Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed on Jun. 30, 2014, as Appl. No. 14/319,526.
Prior Publication US 2015/0376807 A1, Dec. 31, 2015
Int. Cl. C25D 3/38 (2006.01); C25D 5/02 (2006.01); C25D 7/12 (2006.01); H05K 3/42 (2006.01)
CPC C25D 3/38 (2013.01) [C25D 5/02 (2013.01); C25D 7/123 (2013.01); H05K 3/423 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of filling a via in an electronic device with copper comprising: providing an acidic copper electroplating bath comprising a source of copper ions, an acid electrolyte, a source of halide ions, an accelerator, a leveler, and a suppressor, wherein the copper electroplating bath has a dynamic surface tension of ≤40 mN/m; providing as a cathode an electronic device substrate having one or more vias to be filled with copper and having a conductive surface; contacting the electronic device substrate with the copper electroplating bath; and applying a potential for a period of time sufficient to fill the vias with a copper deposit; wherein the copper deposit is substantially void-free and substantially free of surface defects; and wherein the suppressor is a branched secondary alcohol ethoxylate.