US 9,809,887 B2
Method of patterning a stack
Michael R. Feldbaum, San Jose, CA (US); Justin Jia-Jen Hwu, Fremont, CA (US); David S. Kuo, Palo Alto, CA (US); Gennady Gauzner, San Jose, CA (US); Kim Yang Lee, Fremont, CA (US); and Li-Ping Wang, Fremont, CA (US)
Assigned to Seagate Technology LLC, Cupertino, CA (US)
Filed by Seagate Technology LLC, Cupertino, CA (US)
Filed on Feb. 24, 2016, as Appl. No. 15/52,701.
Application 15/052,701 is a continuation of application No. 13/173,906, filed on Jun. 30, 2011, granted, now 9,284,649.
Prior Publication US 2016/0168723 A1, Jun. 16, 2016
Int. Cl. C23F 4/00 (2006.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); G03F 7/00 (2006.01); G11B 5/855 (2006.01)
CPC C23F 4/00 (2013.01) [B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); G11B 5/855 (2013.01); Y10T 428/265 (2015.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
patterning a resist layer disposed over an oxide layer to form a plurality features associated with a bit-patterned medium;
etching a portion of the oxide layer that is not a layer within the formed plurality of features to expose an amorphous carbon layer disposed underneath the oxide layer;
etching the resist layer of the formed plurality of features and the exposed amorphous carbon layer, wherein the etching the resist layer of the formed plurality of features exposes the oxide layer disposed underneath the resist layer of the formed plurality of features, and wherein the etching the exposed amorphous carbon layer exposes a magnetic layer disposed underneath the amorphous carbon layer; and
etching the exposed magnetic layer to form a patterned magnetic layer.