US 9,809,881 B2
Method and apparatus for multizone plasma generation
Matthew Scott Rogers, Mountain View, CA (US); Zhong Qiang Hua, Saratoga, CA (US); and Christopher S. Olsen, Fremont, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Matthew Scott Rogers, Mountain View, CA (US); Zhong Qiang Hua, Saratoga, CA (US); and Christopher S. Olsen, Fremont, CA (US)
Filed on Jul. 28, 2011, as Appl. No. 13/192,870.
Claims priority of provisional application 61/443,066, filed on Feb. 15, 2011.
Prior Publication US 2012/0208371 A1, Aug. 16, 2012
Int. Cl. C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/505 (2006.01); C23C 16/513 (2006.01); C23C 16/458 (2006.01); C23C 16/48 (2006.01); C23C 16/517 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/513 (2013.01) [C23C 16/4584 (2013.01); C23C 16/45565 (2013.01); C23C 16/481 (2013.01); C23C 16/505 (2013.01); C23C 16/517 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32357 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for forming a film on a substrate, comprising:
generating a first plasma from a first gas in a processing region of a processing chamber at a first pressure;
generating a second plasma from a second gas outside of the processing region at a second pressure;
introducing a flow of the second plasma into the processing region to mix with the first plasma; and
heating the substrate positioned on a substrate support within the processing region.