US 9,809,490 B2
Method for producing oxynitride film by atomic layer deposition process
Miyuki Nakai, Osaka (JP); and Satoshi Shibata, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Jun. 21, 2016, as Appl. No. 15/188,060.
Claims priority of application No. 2015-133955 (JP), filed on Jul. 2, 2015; application No. 2015-152470 (JP), filed on Jul. 31, 2015; and application No. 2016-021027 (JP), filed on Feb. 5, 2016.
Prior Publication US 2017/0005358 A1, Jan. 5, 2017
Int. Cl. C23C 16/00 (2006.01); C03C 17/22 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01M 10/0525 (2010.01); H01M 10/0562 (2010.01)
CPC C03C 17/22 (2013.01) [C23C 16/308 (2013.01); C23C 16/45527 (2013.01); C03C 2217/28 (2013.01); C03C 2218/152 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for producing an oxynitride film, comprising:
(A) supplying a first precursor containing a network former into a reactor in which a substrate is placed;
(B) supplying at least one selected from the group consisting of an oxygen gas and an ozone gas into the reactor;
(C) supplying a second precursor containing at least one selected from the group consisting of an alkali metal element and an alkaline-earth metal element into the reactor;
(D) supplying an ammonia gas into the reactor; and
(E) supplying a purge gas into the reactor,
wherein a process cycle including (A), (B), (C), and (E) is repeated a plurality of times while (D) is continuously performed.