US 9,809,490 B2
Method for producing oxynitride film by atomic layer deposition process
Miyuki Nakai, Osaka (JP); and Satoshi Shibata, Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Jun. 21, 2016, as Appl. No. 15/188,060.
Claims priority of application No. 2015-133955 (JP), filed on Jul. 2, 2015; application No. 2015-152470 (JP), filed on Jul. 31, 2015; and application No. 2016-021027 (JP), filed on Feb. 5, 2016.
Prior Publication US 2017/0005358 A1, Jan. 5, 2017
Int. Cl. C23C 16/00 (2006.01); C03C 17/22 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01M 10/0525 (2010.01); H01M 10/0562 (2010.01)
CPC C03C 17/22 (2013.01) [C23C 16/308 (2013.01); C23C 16/45527 (2013.01); C03C 2217/28 (2013.01); C03C 2218/152 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01)] 11 Claims
OG exemplary drawing
1. A method for producing an oxynitride film, comprising:
(A) supplying a first precursor containing a network former into a reactor in which a substrate is placed;
(B) supplying at least one selected from the group consisting of an oxygen gas and an ozone gas into the reactor;
(C) supplying a second precursor containing at least one selected from the group consisting of an alkali metal element and an alkaline-earth metal element into the reactor;
(D) supplying an ammonia gas into the reactor; and
(E) supplying a purge gas into the reactor,
wherein a process cycle including (A), (B), (C), and (E) is repeated a plurality of times while (D) is continuously performed.