US 9,809,452 B2
Making nanochannels and nanotunnels
Babak Nikoobakht, IV, Potomac, MD (US)
Assigned to The United States of America, as represented by the Secretary of Commerce, Washington, DC (US)
Filed by THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, Washington, DC (US)
Filed on Feb. 27, 2017, as Appl. No. 15/442,952.
Claims priority of provisional application 62/303,130, filed on Mar. 3, 2016.
Prior Publication US 2017/0253479 A1, Sep. 7, 2017
Int. Cl. B82B 3/00 (2006.01); B82B 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); B01L 3/00 (2006.01)
CPC B82B 3/0019 (2013.01) [B01L 3/502707 (2013.01); B82B 1/001 (2013.01); H01L 21/02241 (2013.01); H01L 21/30612 (2013.01); H01L 21/3245 (2013.01); B01L 2200/12 (2013.01); B01L 2300/0896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A process for making a nanoduct, the process comprising:
disposing an etchant catalyst on a semiconductor substrate comprising a single crystal structure;
heating the semiconductor substrate to an etching temperature;
introducing an oxidant;
contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst;
anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and
forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.