US 9,809,451 B2
Capacitive sensing structure with embedded acoustic channels
Mei-Lin Chan, Sunnyvale, CA (US); Xiang Li, Mountain View, CA (US); and Martin Lim, San Mateo, CA (US)
Assigned to INVENSENSE, INC., San Jose, CA (US)
Filed by Invensense, Inc., San Jose, CA (US)
Filed on Nov. 16, 2015, as Appl. No. 14/942,969.
Application 14/942,969 is a division of application No. 14/092,300, filed on Nov. 27, 2013, granted, now 9,216,897.
Claims priority of provisional application 61/831,558, filed on Jun. 5, 2013.
Prior Publication US 2016/0068386 A1, Mar. 10, 2016
Int. Cl. H01L 41/113 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); B81B 7/00 (2006.01); H04R 19/00 (2006.01); H01L 41/09 (2006.01); H04R 7/08 (2006.01); H04R 19/04 (2006.01)
CPC B81C 1/00238 (2013.01) [B81B 3/0021 (2013.01); B81B 3/0086 (2013.01); B81B 7/0006 (2013.01); B81C 1/00158 (2013.01); H04R 19/005 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81C 2203/035 (2013.01); B81C 2203/0785 (2013.01); H01L 41/0926 (2013.01); H01L 41/0973 (2013.01); H01L 41/1132 (2013.01); H01L 41/1138 (2013.01); H04R 7/08 (2013.01); H04R 19/04 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a micro-electro-mechanical system (MEMS) device comprising:
forming an electrode on top of a complementary metal-oxide-semiconductor (CMOS) wafer;
forming a moveable dual-plate membrane with top and bottom membranes on top of the electrode, the moveable dual plate membrane forming a MEMS device wafer;
forming an interconnecting structure, wherein the moveable dual-plate membrane and the interconnecting structure create a MEMS on the MEMS device wafer, the interconnecting structure being positioned between the top and bottom membranes and
bonding the CMOS wafer to the MEMS device wafer and causing electrical connection between the CMOS wafer and the MEMS device wafer, the interconnecting structure electrically connecting the top and the bottom membranes.