US 9,809,450 B2
CMOS-MEMS integration using metal silicide formation
Jong Il Shin, San Jose, CA (US); Peter Smeys, San Jose, CA (US); and Jongwoo Shin, Pleasanton, CA (US)
Assigned to INVENSENSE, INC., San Jose, CA (US)
Filed by InvenSense, Inc., San Jose, CA (US)
Filed on Aug. 27, 2015, as Appl. No. 14/838,237.
Prior Publication US 2017/0057813 A1, Mar. 2, 2017
Int. Cl. B81C 1/00 (2006.01); B81B 7/00 (2006.01)
CPC B81C 1/00238 (2013.01) [B81B 7/0006 (2013.01); B81B 2207/012 (2013.01); B81C 2203/019 (2013.01); B81C 2203/036 (2013.01); B81C 2203/0792 (2013.01)] 19 Claims
OG exemplary drawing
1. A method for forming a MEMS device, wherein the MEMS device includes a MEMS substrate and a base substrate, wherein the base substrate includes a top metal layer and the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between, the method comprising:
providing a conductive material over at least a portion of the top metal layer;
patterning the conductive material and the at least a portion of the top metal layer; and
bonding the conductive material with the device layer via metal silicide formation,
wherein the metal silicide formation is amorphous.