US 9,809,449 B2
Display device
Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi-shi, Kanagawa-ken (JP)
Filed on Aug. 26, 2016, as Appl. No. 15/248,649.
Application 15/248,649 is a continuation of application No. 14/626,011, filed on Feb. 19, 2015, granted, now 9,431,428, issued on Aug. 30, 2016.
Application 14/626,011 is a continuation of application No. 14/253,932, filed on Apr. 16, 2014, granted, now 8,975,695, issued on Mar. 10, 2015.
Claims priority of application No. 2013-088181 (JP), filed on Apr. 19, 2013.
Prior Publication US 2016/0362294 A1, Dec. 15, 2016
Int. Cl. H01L 27/14 (2006.01); B81B 7/00 (2006.01); B81B 3/00 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); G02B 26/02 (2006.01); H01L 29/786 (2006.01); G02B 26/04 (2006.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01)
CPC B81B 7/008 (2013.01) [B81B 3/0083 (2013.01); G02B 26/02 (2013.01); G02B 26/04 (2013.01); G02F 1/1368 (2013.01); G02F 1/133512 (2013.01); G02F 1/136209 (2013.01); G02F 1/136213 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); B81B 2201/047 (2013.01); B81B 2203/0163 (2013.01); B81B 2203/051 (2013.01); B81B 2207/012 (2013.01); G02F 1/133345 (2013.01); G02F 1/133514 (2013.01); G02F 1/133723 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor comprising a first semiconductor film;
a second transistor comprising a second semiconductor film including an oxide semiconductor;
a capacitor; and
a MEMS shutter,
wherein:
one of a source and a drain of the first transistor is electrically connected to the MEMS shutter, and
a gate of the first transistor, one of a source and a drain of the second transistor, and one terminal of the capacitor are electrically connected to each other.