US 9,809,446 B1
Semiconductor package and manufacturing method thereof
Jae Ung Lee, Seoul (KR); Byong Jin Kim, Bucheon-si (KR); Young Seok Kim, Seoul (KR); Wook Choi, Seoul (KR); Seung Jae Yoo, Cheongju-si (KR); Yung Woo Lee, Anyang-si (KR); EunNaRa Cho, Seoul (KR); and Dong Hyun Bang, Seoul (KR)
Assigned to AMKOR TECHNOLOGY, INC., Tempe, AZ (US)
Filed by Amkor Technology, Inc., Tempe, AZ (US)
Filed on May 9, 2016, as Appl. No. 15/149,669.
Int. Cl. H01L 23/28 (2006.01); H01L 23/31 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01)
CPC B81B 3/0072 (2013.01) [B81C 1/00666 (2013.01); H01L 21/568 (2013.01); H01L 23/28 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first semiconductor die having a top first die surface and a bottom first die surface, wherein the bottom first die surface is coupled to the substrate, and the first semiconductor die is electrically connected to the substrate;
a plurality of adhesive regions spaced apart from each other on the top first die surface; and
a second semiconductor die having a top second die surface and a bottom second die surface, wherein the bottom second die surface is adhered to the plurality of adhesive regions, and the second semiconductor die is electrically connected to the substrate,
wherein each of the adhesive regions comprises only adhesive material and bridges an entire vertical gap between the top first die surface and the bottom second die surface.
 
15. A semiconductor device comprising:
a substrate;
a first semiconductor die having a top first die surface and a bottom first die surface, wherein the bottom first die surface is coupled to the substrate, and the first semiconductor die is electrically connected to the substrate;
a plurality of adhesive regions spaced apart from each other on the top first die surface; and
a second semiconductor die having a top second die surface and a bottom second die surface, wherein the bottom second die surface is adhered to the plurality of adhesive regions, and the second semiconductor die is electrically connected to the substrate,
wherein each of the plurality of adhesive regions comprises:
a first adhesive layer on and adhered to the top first die surface;
a central layer comprising a central film on top of and adhered to the first adhesive layer; and
a second adhesive layer on top of and adhered to the central layer, and adhered to the bottom second die surface.
 
21. A semiconductor device comprising:
a substrate;
a first semiconductor die having a top first die surface and a bottom first die surface, wherein the bottom first die surface is coupled to the substrate, and the first semiconductor die is electrically connected to the substrate;
a plurality of adhesive regions spaced apart from each other on the top first die surface; and
a second semiconductor die having a top second die surface and a bottom second die surface, wherein the bottom second die surface is adhered to the plurality of adhesive regions, and the second semiconductor die is electrically connected to the substrate
wherein each of the plurality of adhesive regions comprises:
a first adhesive region on and adhered to the top first die surface, the first adhesive region comprising a first adhesive; and
a second adhesive region on and adhered to the top first die surface and the first adhesive region, and adhered to the bottom second die surface, the second adhesive region comprising a second adhesive different from the first adhesive.