US 9,808,875 B2
Methods of fabricating low melting point solder reinforced sealant and structures formed thereby
Deepak V. Kulkarni, Chandler, AZ (US); Carl L. Deppisch, Chandler, AZ (US); Leonel R. Arana, Phoenix, AZ (US); Gregory S. Constable, Chandler, AZ (US); and Sriram Srinivasan, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 5, 2016, as Appl. No. 15/17,398.
Application 15/017,398 is a division of application No. 12/655,407, filed on Dec. 30, 2009, granted, now 9,254,532.
Prior Publication US 2016/0151850 A1, Jun. 2, 2016
Int. Cl. B23K 31/00 (2006.01); B23K 31/02 (2006.01); B23K 1/00 (2006.01); B23K 3/08 (2006.01); B23K 1/20 (2006.01); H01L 23/367 (2006.01)
CPC B23K 1/0016 (2013.01) [B23K 1/20 (2013.01); B23K 1/203 (2013.01); B23K 3/085 (2013.01); H01L 23/3675 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/16251 (2013.01); Y10T 428/12222 (2015.01)] 8 Claims
OG exemplary drawing
 
1. A method comprising:
forming a low melting point solder material on a location of an integrated heat spreader (IHS);
forming a sealant in a keep out zone (KOZ) region of a substrate, wherein the sealant is not formed in a solder resist open (SRO) region of the KOZ, wherein the SRO region is a plurality of openings formed into a top surface of the substrate;
bringing the IHS into contact with the sealant, wherein the low melting point solder material is only located in the SRO region of the KOZ; and
curing the sealant, wherein a solder joint formed from the low melting point solder material is formed between the IHS and the substrate during the curing of the sealant, and wherein the melting temperature of the low melting point solder material is less than or equal to a curing temperature of the sealant.