Subclass |
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ClassTitle
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ELECTRONIC DIGITAL LOGIC CIRCUITRY
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1 | | SUPERCONDUCTOR (E.G., CRYOGENIC, ETC.) |
2 | | . Tunneling device |
3 | | . . Josephson tunneling device |
4 | | . . . Plural devices (e.g., distributive device, etc.) |
5 | | . . . Interference device (i.e., SQUID) |
6 | | . . Function of AND, OR, NAND, NOR, or NOT |
7 | | . Function of AND, OR, NAND, NOR, or NOT |
8 | | SECURITY (E.G., ACCESS OR COPY PREVENTION, ETC.) |
9 | | RELIABILITY |
10 | | . Redundant |
11 | | . . Voter circuit (e.g., majority logic, etc.) |
12 | | . . With flip-flop |
13 | | . . With field effect-transistor |
14 | | . Fail-safe |
15 | | . Parasitic prevention in integrated circuit structure |
16 | | WITH TEST FACILITATING FEATURE |
17 | | ACCELERATING SWITCHING |
18 | | . Bipolar transistor |
19 | | . . With Schottky device |
20 | | . . . Complementary transistors |
21 | | SIGNAL SENSITIVITY OR TRANSMISSION INTEGRITY |
22 | | . Input noise margin enhancement |
23 | | . . With field effect-transistor |
24 | | . . . Complementary FET`s |
25 | | . . . Depletion or enhancement |
26 | | . Output switching noise reduction |
27 | | . . With field effect-transistor |
28 | | . . . With clocking |
29 | | . Pulse shaping (e.g., squaring, etc.) |
30 | | . Bus or line termination (e.g., clamping, impedance matching, etc.) |
31 | | . Signal level or switching threshold stabilization |
32 | | . . Temperature compensation |
33 | | . . Bias or power supply level stabilization |
34 | | . . With field effect-transistor |
35 | | THRESHOLD (E.G., MAJORITY, MINORITY, OR WEIGHTED INPUTS, ETC.) |
36 | | . With field effect-transistor |
37 | | MULTIFUNCTIONAL OR PROGRAMMABLE (E.G., UNIVERSAL, ETC.) |
38 | | . Having details of setting or programming of interconnections or logic functions |
39 | | . Array (e.g., PLA, PAL, PLD, etc.) |
40 | | . . With flip-flop or sequential device |
41 | | . . Significant integrated structure, layout, or layout interconnections |
42 | | . . Bipolar transistor |
43 | | . . . Emitter-coupled logic or emitter-follower logic |
44 | | . . Field effect transistor |
45 | | . . . Complementary FET`s |
46 | | . Sequential (i.e., finite state machine) or with flip-flop |
47 | | . Significant integrated structure, layout, or layout interconnections |
48 | | . Bipolar transistor |
49 | | . Field-effect transistor |
50 | | . . Complementary FET`s |
51 | | INHIBITOR |
52 | | EXCLUSIVE FUNCTION (E.G., EXCLUSIVE OR, ETC.) |
53 | | . Half-adder or quarter-adder |
54 | | . Exclusive NOR |
55 | | . With field-effect transistor |
56 | | TRI-STATE (I.E., HIGH IMPEDANCE AS THIRD STATE) |
57 | | . With field effect-transistor |
58 | | . . Complementary FET`s |
59 | | THREE OR MORE ACTIVE LEVELS (E.G., TERNARY, QUATENARY, ETC.) |
60 | | . With conversion (e.g., three level to two level, etc.) |
61 | | INSULATED GATE CHARGE TRANSFER DEVICE |
62 | | INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.) |
63 | | . Logic level shifting (i.e., interface between devices of different logic families) |
64 | | . . Bi-CMOS |
65 | | . . . TTL to/from CMOS |
66 | | . . . ECL to/from CMOS |
67 | | . . . ECL to/from TTL |
68 | | . . Field-effect transistor (e.g., JFET, MOSFET, etc.) |
69 | | . . . ECL to/from GaAs FET (e.g., MESFET, etc.) |
70 | | . . . TTL to/from MOS |
71 | | . . . . TTL to/from CMOS |
72 | | . . . . . Using depletion or enhancement transistors |
73 | | . . . ECL to/from MOS |
74 | | . . . ECL to/from TTL |
75 | | . . Bipolar transistor |
76 | | . . . TTL to/from MOS |
77 | | . . . ECL to/from MOS |
78 | | . . . ECL to/from TTL |
79 | | . . . Integrated Injection Logic (I2L) |
80 | | . Supply voltage level shifting (i.e., interface between devices of a same logic family with different operating voltage levels) |
81 | | . . CMOS |
82 | | . Current driving (e.g., fan in/out, off chip driving, etc.) |
83 | | . . Field-effect transistor |
84 | | . . . Bi-CMOS |
85 | | . . . . Having plural output pull-up or pull-down transistors |
86 | | . . . Bus driving |
87 | | . . . Having plural output pull-up or pull-down transistors |
88 | | . . . With capacitive or inductive bootstrapping |
89 | | . . Bipolar transistor |
90 | | . . . Bus driving |
91 | | . . . Having plural output pull-up or pull-down transistors |
92 | | . . . With capacitive or inductive bootstrapping |
93 | | CLOCKING OR SYNCHRONIZING OF LOGIC STAGES OR GATES |
94 | | . Metastable state prevention |
95 | | . Field-effect transistor |
96 | | . . Two or more clocks (e.g., phase clocking, etc.) |
97 | | . . . MOSFET |
98 | | . . MOSFET |
99 | | HAVING LOGIC LEVELS CONVEYED BY SIGNAL FREQUENCY OR PHASE |
100 | | INTEGRATED INJECTION LOGIC |
101 | | SIGNIFICANT INTEGRATED STRUCTURE, LAYOUT, OR LAYOUT INTERCONNECTIONS |
102 | | . Field-effect transistor |
103 | | . . Complementary FET`s |
104 | | FUNCTION OF AND, OR, NAND, NOR, or NOT |
105 | | . Decoding |
106 | | . . With field-effect transistor |
107 | | . . . Depletion or enhancement |
108 | | . . . CMOS |
109 | | . Bipolar and FET |
110 | | . . Bi-CMOS |
111 | | . Space discharge device (e.g., vacuum tube, etc.) |
112 | | . Field-effect transistor (e.g., JFET, etc.) |
113 | | . . Pass transistor logic or transmission gate logic |
114 | | . . Wired logic (e.g., wired-OR, wired-AND, dotted logic, etc.) |
115 | | . . Source-coupled logic (e.g., current mode logic (CML), differential current switch logic (DCSL), etc.) |
116 | | . . Schottky-gate FET (i.e., MESFET) |
117 | | . . . Depletion or enhancement |
118 | | . . . Diode transistor logic |
119 | | . . MOSFET (i.e., metal-oxide semiconductor field-effect transistor) |
120 | | . . . Depletion or enhancement |
121 | | . . . CMOS |
122 | | . . Complementary FET`s |
123 | | . . With semiconductor diode or negative resistance device |
124 | | . Bipolar transistor (e.g., RTL, DCTL, etc.) |
125 | | . . Wired logic or open collector logic (e.g., wired-OR, wired-AND, dotted logic, etc.) |
126 | | . . Emitter-coupled or emitter-follower logic |
127 | | . . . Current mode logic (CML) |
128 | | . . Transistor-transistor logic (TTL) |
129 | | . . . Complementary transistor logic (CTL) |
130 | | . . Diode-transistor logic (DTL) |
131 | | . . . With metal semiconductor junction diode (e.g., Schottky barrier, etc.) |
132 | | . . With negative resistance device (e.g., tunnel diode, thyristor, etc.) |
133 | | . Diode |
134 | | . . Negative resistance diode (e.g., tunnel, gunn, etc.) |
135 | | . Negative resistance device |
136 | | MISCELLANEOUS |