US 7,472,330 B2
Magnetic memory which compares compressed fault maps
Jonathan Jedwab, Vancouver (Canada); and David Murray Banks, Bristol (United Kingdom)
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of)
Filed on Nov. 26, 2003, as Appl. No. 10/722,918.
Prior Publication US 2005/0138495 A1, Jun. 23, 2005
Int. Cl. G11C 29/00 (2006.01)
U.S. Cl. 714—763 35 Claims
OG exemplary drawing
 
1. A magnetic memory, comprising:
at least two magnetic memory cells configured to store data; and
a control system configured to at least twice obtain parametric values from the magnetic memory cells and generate a corresponding compressed fault map using the parametric values, wherein at least one of the compressed fault maps is compared to a previous one of the compressed fault maps and an indication is provided if there are differences, said control system further configured to preserve data in said at least two magnetic memory cells by migrating the data from said at least two magnetic memory cells to another memory medium in response to the indication.