| US 7,470,574 B2 | ||
| OFET structures with both n- and p-type channels | ||
| Zhenan Bao, Stanford, Calif. (US); Evert-Jan Borkent, Groningen (Netherlands); and Dawen Li, Ann Arbor, Mich. (US) | ||
| Assigned to Alcatel-Lucent USA Inc., Murray Hill, N.J. (US) | ||
| Filed on Jan. 12, 2006, as Appl. No. 11/330,472. | ||
| Application 11/330472 is a division of application No. 10/875478, filed on Jun. 24, 2004, granted, now 7,045,814. | ||
| Prior Publication US 2006/0138406 A1, Jun. 29, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—157 [438/99; 257/E21.179] | 9 Claims |
| 1. A method for fabricating a dual organic field effect transistor (OFET) structure, comprising:
forming a first gate structure on a substrate;
forming a stack over said first gate structure and over said substrate, said stack comprising a p-type organic semiconducting
layer and an n-type organic semiconducting layer, said organic semiconducting layers being in contact along an interface;
forming a source electrode and a drain electrode; and
forming a second gate structure on an opposite side of said stack as said first gate structure; and
wherein said source and drain electrodes are in contact with one of said organic semiconductor layers, wherein said first
gate structure is configured to control a channel region of said n-type organic semiconductor layer, and said second gate
structure is configured to control a channel region of said p-type organic semiconductor layer.
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