US 7,469,391 B2
Method and device of analyzing crosstalk effects in an electronic device
Matthieu Carrere, Nice (France); Robert Häuβler, Augsburg (Germany); Pierrick Pedron, Antibes (France); Carsten Rau, München (Germany); and Birgit Sanders, Haar (Germany)
Assigned to Infineon Technologies AG, Munich (Germany)
Filed on Nov. 30, 2005, as Appl. No. 11/291,090.
Claims priority of application No. 04292832 (EP), filed on Nov. 30, 2004.
Prior Publication US 2006/0143584 A1, Jun. 29, 2006
Int. Cl. G06F 17/50 (2006.01)
U.S. Cl. 716—4  [716/5; 716/6] 23 Claims
OG exemplary drawing
 
1. A method for analyzing crosstalk effects in an electronic device comprising:
a) providing a model description of the electronic device, the model description defining a victim net and at least one aggressor net capacitively coupled to the victim net, wherein the model description is configured for use in a simulation of the dynamic response behaviour at an output of the victim net with respect to an input signal of the victim net and/or of the at least one aggressor net, wherein the model description corresponds to a transistor-level description of the electronic device;
b) representing a characteristic property of the dynamic response behaviour as an output function of the simulation, the output function having a value depending on at least two input parameters of the simulation, wherein the input parameters comprise a timing of a transition of the input signal of the at least one aggressor net relative to a timing of a transition of the input signal of the victim net, and wherein the output function represents (i) a measure of noise induced in the output signal of the victim net, (ii) a measure of delay of the output signal of the victim net with respect to the input signal of the victim net, or (iii) a measure of the transition time of a signal transition observed at the output of the victim net; and
c) evaluating the output function so as to find an extremum of the output function in a preset range of the input parameters.