US 7,469,058 B2
Method and system for a maskless lithography rasterization technique based on global optimization
Azat Latypov, San Jose, Calif. (US); Sherman Poultney, Wilton, Conn. (US); and Wenceslao Cebuhar, Danbury, Conn. (US)
Assigned to ASML Holding N.V., Veldhoven (Netherlands)
Filed on Jan. 27, 2006, as Appl. No. 11/340,865.
Claims priority of provisional application 60/647459, filed on Jan. 28, 2005.
Prior Publication US 2006/0209314 A1, Sep. 21, 2006
Int. Cl. G06K 9/00 (2006.01); G02F 1/1335 (2006.01); G02F 1/135 (2006.01); G21K 5/00 (2006.01); G03C 5/20 (2006.01); G02B 27/42 (2006.01); G03H 1/12 (2006.01); G03B 27/54 (2006.01)
U.S. Cl. 382—144  [349/4; 349/30; 378/34; 430/396; 250/550; 359/11; 359/237; 355/67; 355/71] 22 Claims
OG exemplary drawing
 
1. A method for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern, comprising:
determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system; and
configuring the states of the SLM pixels to match determined diffraction orders related to the desired pattern.