| US 7,468,924 B2 | ||
| Non-volatile memory device capable of reducing threshold voltage distribution | ||
| Wook-Hyun Kwon, Yongin (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 09, 2006, as Appl. No. 11/636,205. | ||
| Claims priority of application No. 10-2006-0103053 (KR), filed on Oct. 23, 2006. | ||
| Prior Publication US 2008/0094923 A1, Apr. 24, 2008 | ||
| Int. Cl. G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—195 [365/189.14; 365/185.33; 365/185.22] | 20 Claims |
| 1. A method for programming a flash memory device which comprises a plurality of memory cells arranged in rows and columns,
the method comprising:
programming selected memory cells from among the plurality of memory cells according to loaded data bits;
reading data bits from the programmed selected memory cells;
determining whether each of the programmed memory cells has been successfully programmed based on the results of the reading
step;
inhibiting the programming of memory cells that have been determined to have been successfully programmed; and
repeating the programming, reading, determining and inhibiting steps until each of the selected memory cells has been determined
to have been successfully programmed,
wherein a memory cell that has been previously determined to have been successfully programmed and inhibited is uninhibited
and subsequently re-programmed when it is determined that the previously inhibited memory cell is no longer successfully programmed.
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