	US 7,468,921 B2
	Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines
Nima Mokhlesi, Los Gatos, Calif. (US)
Assigned to SanDisk Corporation, Milpitas, Calif. (US)
Filed on Jan. 22, 2008, as Appl. No. 12/18,127.
Application 12/018127 is a division of application No. 11/425024, filed on Jun. 19, 2006, granted, now 7,349,261.
Prior Publication US 2008/0130370 A1, Jun. 05, 2008
Int. Cl. G11C 11/34 (2006.01); G11C 16/04 (2006.01)

U.S. Cl. 365—185.28 [365/185.18; 365/185.22]

20 Claims

1. A method for operating non-volatile storage, comprising:

programming at least one non-volatile storage element associated with a first word line by applying a first voltage waveform to the first word line, the first voltage waveform including a first programming voltage during a first time interval, a reduced voltage during a second time interval which follows the first time interval, and at least one verify voltage during a third time interval which follows the second time interval; and

applying a second voltage waveform to a second word line, the second voltage waveform including associated voltages during the first, second and third time intervals, the associated voltage during the second time interval representing a direct transition from the associated voltage during the first time interval to the associated voltage during the third time interval.