| US 7,468,920 B2 | ||
| Applying adaptive body bias to non-volatile storage | ||
| Deepak Chandra Sekar, Mountain View, Calif. (US); and Nima Mokhlesi, Los Gatos, Calif. (US) | ||
| Assigned to SanDisk Corporation, Milpitas, Calif. (US) | ||
| Filed on Dec. 30, 2006, as Appl. No. 11/618,791. | ||
| Prior Publication US 2008/0158960 A1, Jul. 03, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 11/34 (2006.01); G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.27 [365/185.09; 365/185.03; 365/185.17; 365/201] | 26 Claims |
| 1. A method for operating non-volatile storage, comprising:
reading coded data from multi-bit non-volatile storage elements in at least one set of multi-bit non-volatile storage elements
while biasing a substrate at a first bias level, the at least one set of multi-bit non-volatile storage elements is formed,
at least in part, on the substrate;
decoding the coded data;
obtaining a count of bit errors based on the decoding; and
if the count exceeds a threshold, determining a second bias level for biasing the substrate when performing a subsequent read
of multi-bit non-volatile storage elements in the at least one set of multi-bit non-volatile storage elements.
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