US 7,468,919 B2
Biasing non-volatile storage based on selected word line
Deepak Chandra Sekar, Mountain View, Calif. (US); and Nima Mokhlesi, Los Gatos, Calif. (US)
Assigned to SanDisk Corporation, Milpitas, Calif. (US)
Filed on Dec. 30, 2006, as Appl. No. 11/618,788.
Prior Publication US 2008/0158976 A1, Jul. 03, 2008
Int. Cl. G11C 16/04 (2006.01)
U.S. Cl. 365—185.27  [365/185.22; 365/185.21; 365/185.17] 24 Claims
OG exemplary drawing
 
1. A method for operating non-volatile storage, comprising:
sensing a condition of at least one non-volatile storage element of a set of non-volatile storage elements, the at least one non-volatile storage element is in communication with a selected word line of a set of word lines, the set of non-volatile storage elements is in communication with the set of word lines; and
biasing a substrate during the sensing, the set of non-volatile storage elements are formed, at least in part, on the substrate, and a level of the biasing varies based on a position of the selected word line in the set of word lines, the biasing comprises applying a voltage to the substrate via a terminal which is connected to the substrate, a level of the voltage varies based on the position of the selected word line in the set of word lines.