	US 7,468,918 B2
	Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
Yingda Dong, Sunnyvale, Calif. (US); Jeffrey W. Lutze, San Jose, Calif. (US); Dana Lee, Saratoga, Calif. (US); and Gerrit Jan Hemink, Yokohama (Japan)
Assigned to SanDisk Corporation, Milpitas, Calif. (US)
Filed on Dec. 29, 2006, as Appl. No. 11/618,594.
Prior Publication US 2008/0159003 A1, Jul. 03, 2008
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/06 (2006.01)

U.S. Cl. 365—185.25 [365/185.17; 365/185.18; 365/203]

32 Claims

1. A non-volatile memory system, comprising:

a set of non-volatile storage elements, said set of non-volatile storage elements includes a particular non-volatile storage element, a first subset of one or more non-volatile storage elements on a drain side of said particular non-volatile storage element and a second subset of two or more non-volatile storage elements, said first subset is subjected to partial programming before completing programming for said particular non-volatile storage element;

managing circuitry in communication with said set of non-volatile storage elements to provide signals to said set of non-volatile storage elements, said managing circuitry pre-charges said set of non-volatile storage elements prior to applying a program signal to said particular non-volatile storage element of said set of non-volatile storage elements, said managing circuitry applies one or more first pre-charge enable signals to said first subset of one or more non-volatile storage elements and applies one or more second pre-charge enable signals to said second subset of two or more non-volatile storage elements, said one or more first pre-charge enable signals are at higher voltages than said one or more second pre-charge enable signals, said managing circuitry applies said program signal to said particular non-volatile storage element when said set of non-volatile storage elements is pre-charged.