| US 7,468,911 B2 | ||
| Non-volatile memory using multiple boosting modes for reduced program disturb | ||
| Jeffrey W. Lutze, San Jose, Calif. (US); and Yingda Dong, Sunnyvale, Calif. (US) | ||
| Assigned to SanDisk Corporation, Milpitas, Calif. (US) | ||
| Filed on Nov. 02, 2006, as Appl. No. 11/555,856. | ||
| Prior Publication US 2008/0123426 A1, May 29, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.17 [365/185.18; 365/185.28] | 18 Claims |
| 1. A non-volatile storage system, comprising:
a set of non-volatile storage elements which is provided in a plurality of NAND strings;
a plurality of word lines in communication with set of non-volatile storage elements; and
one or more control circuits in communication with the set of non-volatile storage elements, the one or more control circuits:
(a) determine a set of voltages to be applied to unselected word lines of the plurality of word lines based on which boosting
mode of multiple available boosting modes is currently selected by the one or more control circuits, and (b) program the set
of non-volatile storage elements, including applying the set of voltages to the unselected word lines, the set of voltages
boosts channel regions associated with unselected NAND strings of the plurality of NAND strings, and applying a program voltage
to a selected word line of the plurality of word lines while the channel regions are boosted.
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