| US 7,468,873 B2 | ||
| Over-voltage protected semiconductor device | ||
| Jade H. Alberkrack, Tempe, Ariz. (US); and David Cave, Tempe, Ariz. (US) | ||
| Assigned to Dolpan Audio, LLC, Dover, Del. (US) | ||
| Filed on Jul. 11, 2006, as Appl. No. 11/484,869. | ||
| Prior Publication US 2008/0013229 A1, Jan. 17, 2008 | ||
| Int. Cl. H02H 3/26 (2006.01); H02H 3/18 (2006.01) | ||
| U.S. Cl. 361—86 | 23 Claims |
| 1. A semiconductor device comprising:
a substrate;
a first circuit cell formed on said substrate, said first circuit cell comprising first and second terminals and a control
terminal and having a characteristic first breakdown voltage across said first and said second terminals;
a voltage sensing transistor formed on said substrate, said voltage sensing transistor being coupled across said first and
second terminals, said voltage sensing transistor having a second element characteristic breakdown voltage, said second element
characteristic breakdown voltage being less than said characteristic first breakdown voltage, said voltage sensing transistor
providing a control signal to said first circuit cell control terminal when the voltage across said first circuit cell first
and second terminals exceeds said second element characteristic breakdown voltage.
|