| US 7,468,543 B2 | ||
| Semiconductor device, communication device, and semiconductor device inspecting method | ||
| Yoshitomo Sagae, Kanagawa (Japan); and Toshiki Seshita, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 17, 2004, as Appl. No. 10/942,849. | ||
| Claims priority of application No. 2003-327871 (JP), filed on Sep. 19, 2003. | ||
| Prior Publication US 2005/0093026 A1, May 05, 2005 | ||
| Int. Cl. H01L 27/24 (2006.01) | ||
| U.S. Cl. 257—531 [257/532; 257/528; 257/E27.004; 333/103] | 18 Claims |
| 1. A semiconductor device comprising:
a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency
signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode,
bias voltages at the first and second electrodes being substantially equal; and
an inductor element and a capacitor element which are connected in series to each other and are connected in parallel with
respect to the semiconductor switching element at the first and the second electrodes,
wherein the capacitor element is used to inspect a DC characteristic of the semiconductor switching element by interrupting
a flow of DC current through the inductor element.
|