| US 7,468,321 B2 | ||
| Application of impressed-current cathodic protection to prevent metal corrosion and oxidation | ||
| Kai-Ming Ching, Taichung (Taiwan); Chia-Fu Lin, Hsin-Chu (Taiwan); Wen-Hsiang Tseng, Hsinchu (Taiwan); Ta-Min Lin, Hsinchu (Taiwan); Yen-Ming Chen, Hsinchu (Taiwan); Hsin-Hui Lee, Kaohsiung (Taiwan); Chao-Yuan Su, Kaohsiung (Taiwan); and Wen-Hsiang Tseng, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on May 10, 2006, as Appl. No. 11/382,500. | ||
| Application 11/382500 is a continuation of application No. 10/286626, filed on Nov. 02, 2002, granted, now 7,276,454. | ||
| Prior Publication US 2006/0194407 A1, Aug. 31, 2006 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—687 [438/680; 438/688; 257/E21.17; 257/E21.006; 257/E21.007; 257/E21.23; 257/E21.218; 57/E21.227; 57/E21.229; 57/E21.246] | 20 Claims |
| 1. A method of preventing damage to a layer of metal in a semiconductor process, comprising:
providing a semiconductor substrate, with a layer of metal;
performing a semiconductor process on the semiconductor substrate, wherein the semiconductor process brings a surface of the
layer of the metal in contact with a liquid solution, which is neutral or alkaline, capable of causing corrosion or oxidation
thereof; and
applying a negative voltage to the layer of metal, such that the liquid solution is unable to corrode and oxidize the layer
of metal,
wherein the negative voltage applied to the layer of metal depends on the layer of metal and a pH value of the liquid solution.
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