| US 7,468,312 B2 | ||
| Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device | ||
| Koichiro Tanaka, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Dec. 30, 2004, as Appl. No. 11/24,423. | ||
| Application 11/024423 is a division of application No. 10/290383, filed on Nov. 08, 2002, granted, now 6,852,947. | ||
| Claims priority of application No. 2001-345169 (JP), filed on Nov. 09, 2001; and application No. 2001-350889 (JP), filed on Nov. 16, 2001. | ||
| Prior Publication US 2005/0111339 A1, May 26, 2005 | ||
| Int. Cl. H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—487 [257/E21.134] | 18 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
emitting a plurality of laser beams out of a plurality of lasers;
synthesizing the plurality of laser beams into a laser light wherein centers of two adjacent laser beams in the laser light
are distant from each other; and
irradiating the laser light to a semiconductor film,
wherein a distribution of an energy density of the laser light in a longitudinal direction in the laser light is within ±10%
of an energy density except for attenuation regions.
|