| US 7,468,305 B2 | ||
| Forming pocket and LDD regions using separate masks | ||
| Michael Yu, Taichung (Taiwan); Chih-Ping Chao, Hsin-Chu (Taiwan); Chih-Sheng Chang, Hsinchu (Taiwan); and Chun-Hong Chen, Jhubei (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on May 01, 2006, as Appl. No. 11/414,980. | ||
| Prior Publication US 2007/0254447 A1, Nov. 01, 2007 | ||
| Int. Cl. H01L 21/331 (2006.01) | ||
| U.S. Cl. 438—373 [438/372; 438/374; 438/305; 438/E21.205] | 14 Claims |
| 1. A method for forming a semiconductor structure, the method comprising:
providing a semiconductor chip including active regions;
forming gate structures in the active regions;
forming N-LDD regions on the semiconductor chip using an N-LDD mask;
forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, wherein the N-Pocket regions are of p-type, and
wherein the N-LDD mask and the N-Pocket mask are different masks;
forming P-LDD regions on the semiconductor chip using a P-LDD mask; and
forming P-Pocket regions on the semiconductor chip using a P-Pocket mask, wherein the P-Pocket regions are of n-type, wherein
the P-LDD mask and the P-Pocket mask are different masks, and wherein the N-LDD mask, the N-Pocket mask, the P-LDD mask, and
the P-Pocket mask are for defining patterns in lithography processes.
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