| US 7,468,296 B1 | ||
| Thin film germanium diode with low reverse breakdown | ||
| Ercan Adem, Sunnyvale, Calif. (US); Matthew Buynoski, Palo Alto, Calif. (US); Robert Chiu, San Jose, Calif. (US); Bryan Choo, Mountain View, Calif. (US); Calvin Gabriel, Cupertino, Calif. (US); Joong Jeon, Cupertino, Calif. (US); David Matsumoto, San Jose, Calif. (US); Jeffrey Shields, Sunnyvale, Calif. (US); Bhanwar Singh, Morgan Hill, Calif. (US); Winny Stockwell, Redwood City, Calif. (US); and Wen Yu, Fremont, Calif. (US) | ||
| Assigned to Spansion LLC, Sunnyvale, Calif. (US); and Advanced Micro Devices Inc., Sunnyvale, Calif. (US) | ||
| Filed on Nov. 30, 2005, as Appl. No. 11/290,787. | ||
| Int. Cl. H01L 21/8234 (2006.01); H01L 27/10 (2006.01) | ||
| U.S. Cl. 438—237 [438/328; 438/600; 257/202; 257/208] | 18 Claims |
| 1. A method of fabricating an electronic structure comprising;
providing a diode comprising germanium;
providing a barrier layer in contact with the diode; and
providing a memory device connected to the diode through the barrier layer.
|