| US 7,468,294 B2 | ||
| Semiconductor device and a method of manufacturing the same | ||
| Masashi Yamaura, Komoro (Japan); Hirokazu Nakajima, Saku (Japan); Nobuyoshi Maejima, Komoro (Japan); Mikio Negishi, Komoro (Japan); Tomio Yamada, Komoro (Japan); Tomomichi Koizumi, Komoro (Japan); and Tsuneo Endoh, Komoro (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Filed on Nov. 10, 2004, as Appl. No. 10/985,049. | ||
| Application 10/985049 is a division of application No. 10/021173, filed on Dec. 19, 2001, granted, now 6,831,360. | ||
| Claims priority of application No. 2001-002371 (JP), filed on Jan. 10, 2001. | ||
| Prior Publication US 2005/0082683 A1, Apr. 21, 2005 | ||
| Int. Cl. H01L 21/50 (2006.01); H01L 21/48 (2006.01); H01L 21/44 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 23/40 (2006.01) | ||
| U.S. Cl. 438—124 [438/127; 438/112; 257/778] | 15 Claims |
| 1. A method of manufacturing a semiconductor device comprising the steps of:
mounting surface mounted parts by soldering connection to a wiring substrate; and
covering and resin encapsulating solder connection portions formed by the solder connection and the surface mounted parts
with an elastic insulative resin having a modulus of elasticity of 200 MPa or less at a temperature of 150° C. or higher.
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