| US 7,468,289 B2 | ||
| Solid-state imaging device and method for manufacturing the same | ||
| Yasushi Maruyama, Kanagawa (Japan); Hideshi Abe, Kanagawa (Japan); and Hiroyuki Mori, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Aug. 23, 2006, as Appl. No. 11/466,527. | ||
| Application 11/466527 is a division of application No. 10/978754, filed on Nov. 01, 2004. | ||
| Claims priority of application No. P2003-374627 (JP), filed on Nov. 04, 2003. | ||
| Prior Publication US 2006/0281215 A1, Dec. 14, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—65 [438/66; 257/E21.527] | 4 Claims |
| 1. A method for manufacturing a solid-state imaging device using a layered substrate in which a silicon substrate, an intermediate
layer and a silicon layer are laminated, comprising at least the steps of:
forming a semiconductor region of a photo sensor portion in said silicon layer of said layered substrate;
bonding a first supporting substrate onto said silicon layer;
removing said silicon substrate and said intermediate layer of said layered substrate;
forming thereafter a wiring portion including a wiring layer in a insulative layer above said silicon layer;
bonding a second supporting substrate onto said wiring portion; and
removing said first supporting substrate to make said silicon layer exposed.
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