| US 7,468,282 B2 | ||
| Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element | ||
| Hidekazu Tanaka, Suita (Japan); and Tomoji Kawai, Minoo (Japan) | ||
| Assigned to Japan Science and Technology Agency, Saitama (Japan) | ||
| Filed on Nov. 06, 2007, as Appl. No. 11/979,584. | ||
| Application 11/979584 is a division of application No. 10/505942, granted, now 7,309,903, previously published as PCT/JP03/03604, filed on Mar. 25, 2003. | ||
| Claims priority of application No. 2002-086928 (JP), filed on Mar. 26, 2002. | ||
| Prior Publication US 2008/0085567 A1, Apr. 10, 2008 | ||
| Int. Cl. H01L 29/82 (2006.01) | ||
| U.S. Cl. 438—3 [257/425; 257/427; 257/295; 257/E21.665; 257/421] | 4 Claims |
| 1. A method of manufacturing a tunneling magnetoresistive element in which a first ferromagnetic layer which serves as p-type
semiconductor and a second ferromagnetic layer which serves as an n-type semiconductor are connected via an insulative layer,
and which shows tunneling magnetoresistance according to a magnetization of said first ferromagnetic layer and a magnetization
of said second ferromagnetic layer, comprising:
forming said first ferromagnetic layer on a substrate;
forming the insulative layer on said first ferromagnetic layer; and
forming said second ferromagnetic layer on said insulating layer.
|