US 7,468,146 B2
	Metal chalcogenide composite nano-particles and layers therewith
Hieronymus Andriessen, Beerse (Belgium)
Assigned to Agfa-Gevaert, Mortsel (Belgium)
Filed on Sep. 11, 2003, as Appl. No. 10/659,926.
Claims priority of provisional application 60/411734, filed on Sep. 18, 2002.
Claims priority of application No. PCT/EP02/10268 (WO), filed on Sep. 12, 2002.
Prior Publication US 2004/0103936 A1, Jun. 03, 2004
Int. Cl. C09K 11/56 (2006.01); C09K 11/88 (2006.01); H01L 31/0296 (2006.01); H01L 31/0336 (2006.01); H01L 31/101 (2006.01); C01B 19/00 (2006.01); C01G 9/08 (2006.01); C01G 11/02 (2006.01)

U.S. Cl. 252—301.4R  [252/301.4  S; 252/301.6  R; 252/301.6  S; 252/62.3  ZT; 423/508; 423/509; 423/561.1; 423/562; 423/566.1; 977/826; 977/824; 977/783; 977/778; 977/834; 977/948; 136/264; 136/265; 136/260; 136/243; 438/95]

27 Claims

1. A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal, wherein said metal capable of forming n-type semiconducting chalcogenide nano-particles is selected from the group consisting of zinc, bismuth, indium, tin, tantalum and titanium, and wherein said metal chalcogenide composite particle further comprises a metal capable of forming spectrally sensitizing chalcogenide nano-particles with a band-gap between 1.0 and 2.9 eV is selected from the group consisting of silver, lead, copper, bismuth, vanadium and cadmium.