| US 7,468,108 B2 | ||
| Metal layer forming methods and capacitor electrode forming methods | ||
| Eugene P. Marsh, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on May 23, 2006, as Appl. No. 11/439,779. | ||
| Application 11/439779 is a continuation of application No. 10/133951, filed on Apr. 25, 2002, granted, now 7,105,065. | ||
| Prior Publication US 2006/0207691 A1, Sep. 21, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/441 (2006.01) | ||
| U.S. Cl. 148—240 [148/273; 148/280; 438/387; 438/399; 438/650] | 20 Claims |
| 1. A capacitor electrode forming method comprising:
chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer comprising non-metal
components from the precursor;
treating the chemisorbed layer at a temperature of between 100 and 190° C. with an oxidant effective to remove the non-metal
components to form a treated layer consisting essentially of metal;
sufficiently repeating the chemisorbing, the treating, and the removing to form at least one additional treated layer consisting
essentially of metal on the treated layer; and
forming a capacitor electrode consisting of the treated layers.
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