| US 7,468,104 B2 | ||
| Chemical vapor deposition apparatus and deposition method | ||
| Allen P. Mardian, Boise, Id. (US); Philip H. Campbell, Meridian, Id. (US); Craig M. Carpenter, Boise, Id. (US); Randy W. Mercil, Boise, Id. (US); and Sujit Sharan, Chandler, Ariz. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on May 17, 2002, as Appl. No. 10/150,388. | ||
| Prior Publication US 2003/0215569 A1, Nov. 20, 2003 | ||
| Int. Cl. C23C 16/455 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/44 (2006.01) | ||
| U.S. Cl. 118—715 [118/728; 156/345.33] | 5 Claims |
| 1. A chemical vapor deposition apparatus comprising:
a deposition chamber defined at least in part by a chamber sidewall and a chamber base wall;
a substrate holder within the chamber;
at least one process chemical inlet to the deposition chamber, the at least one process chemical inlet passing through a chamber
lid which opposes the chamber base wall;
a chamber outlet;
at least one of the chamber sidewall and chamber base wall comprising a chamber surface having a plurality of purge gas inlets
to the chamber therein, the purge gas inlets being separate from the at least one process chemical inlet;
a purge gas inlet passageway in fluid communication with the purge gas inlets; and
wherein the purge gas inlets are of at least two different inlet sizes, at least some of the purge gas inlets further from
the chamber outlet being larger than at least some of the purge gas inlets closer to the chamber outlet.
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