| US 7,468,103 B2 | ||
| Method of manufacturing gallium nitride-based single crystal substrate | ||
| Soo Min Lee, Seoul (Korea, Republic of); Hun Joo Hahm, Kyungki-do (Korea, Republic of); and Young Ho Park, Kyungki-do (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do (Korea, Republic of) | ||
| Filed on May 04, 2004, as Appl. No. 10/837,709. | ||
| Claims priority of application No. 10-2003-0069495 (KR), filed on Oct. 07, 2003. | ||
| Prior Publication US 2005/0072353 A1, Apr. 07, 2005 | ||
| Int. Cl. C30B 25/18 (2006.01) | ||
| U.S. Cl. 117—97 [117/1; 117/90; 117/88; 117/915] | 8 Claims |
| 1. A method of manufacturing a gallium nitride-based single crystal substrate, comprising:
a) preparing a zinc oxide (ZnO) substrate;
b) primarily growing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1) single crystal layer on the ZnO substrate at a temperature of about 500° C. to 600° C.; and
c) secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based
single crystal layer at a temperature of 900° C.˜1,150° C., while removing the ZnO substrate by etching the underside of the
ZnO substrate,
wherein the ZnO substrate has a thickness of about 150 μm or less and the primarily grown gallium nitride-based single crystal
has a thickness of about 50 μm˜150 μm.
|