| US 7,466,727 B2 | ||
| Passive Q-switch laser | ||
| Ehud Galun, Rehovot (Israel); Efrat Lifshitz, Haifa (Israel); Marina Sirota, Rehovot (Israel); Vladimir Krupkin, Rishon Lezion (Israel); and Aldona Sashchiuk, Nazareth-Elite (Israel) | ||
| Assigned to ELOP Electro-Optics Industries Ltd., Rehovat (Israel); and Technion Research and Development Foundation Ltd., Haifa (Israel) | ||
| Filed on Oct. 16, 2006, as Appl. No. 11/582,133. | ||
| Application 11/582133 is a continuation of application No. 11/132037, filed on May 17, 2005, abandoned. | ||
| Application 11/132037 is a continuation in part of application No. PCT/IL03/00997, filed on Nov. 25, 2003. | ||
| Claims priority of provisional application 60/429320, filed on Nov. 26, 2002. | ||
| Prior Publication US 2007/0076770 A1, Apr. 05, 2007 | ||
| Int. Cl. H01S 3/11 (2006.01); H01S 3/113 (2006.01) | ||
| U.S. Cl. 372—10 [372/11] | 40 Claims |
| 1. A passive Q-switch for a laser system operative at the near infrared wavelength region of 700-4,000 nm, said passive Q-switch
comprising a saturable absorber comprising IV-VI semiconductor nanocrystals (NCs) embedded in a transparent matrix,
wherein said NCs comprises cores coated with shells having an energy band gap wider than that of the core material.
|