US 7,466,065 B2
Bimorph switch, bimorph switch manufacturing method, electronic circuitry and electronic circuitry manufacturing method
Hirokazu Sanpei, Tokyo (Japan); Jun Mizuno, Saitama (Japan); Masazumi Yasuoka, Tokyo (Japan); Humikazu Takayanagi, Tokyo (Japan); Takehisa Takoshima, Miyagi (Japan); Masaru Miyazaki, Tokyo (Japan); and Masayoshi Esashi, 1-11-9, Yagiyama-minami, Taihaku-ku, Sendai-shi, Miyagi 982-0807 (Japan)
Assigned to Advantest Corporation, Tokyo (Japan); and Masayoshi Esashi, Miyagi (Japan)
Filed on Aug. 15, 2006, as Appl. No. 11/504,381.
Application 11/504381 is a division of application No. 11/040502, filed on Jan. 21, 2005.
Application 11/040502 is a continuation of application No. PCT/JP03/07905, filed on Jun. 23, 2003.
Claims priority of application No. 2002-213202 (JP), filed on Jul. 22, 2002.
Prior Publication US 2006/0273692 A1, Dec. 07, 2006
Int. Cl. H01L 29/00 (2006.01); H01L 41/08 (2006.01); H03H 11/24 (2006.01)
U.S. Cl. 310—330  [200/181] 4 Claims
OG exemplary drawing
 
1. An electronic circuitry formed on a substrate, comprising:
an integrated circuit which comprises a first terminal and a second terminal and is formed on the substrate;
a mechanical switch mounted on the substrate comprising a traveling contact, a fixed contact, and a bimorph section, operable to drive said traveling contact and electrically connect the first terminal and the second terminal by electrically connecting said traveling contact and said fixed contact;
a cap comprising a top cover section that covers the traveling contact, the fixed contact, and the bimorph section and a plurality of side cover sections which extend from the edges of the top cover section to the substrate and surround the sides of the bimorph section;
wherein said integrated circuit further comprises a semiconductor switch, and said mechanical switch used for a signal of high frequency switches a signal of frequency higher than that of said semiconductor switch used for a signal of low frequency; and
wherein said integrated circuit comprises a semiconductor switch, and said mechanical switch has an off leakage current less than that of said semiconductor switch, and said mechanical switch switches greater current than that of said semiconductor switch.