| US 7,465,981 B2 | ||
| Semiconductor device and a method of manufacturing the same | ||
| Kazuhide Abe, Minato-ku (Japan) | ||
| Assigned to Oki Electric Industry Co., Ltd., Tokyo (Japan) | ||
| Filed on Apr. 28, 2005, as Appl. No. 11/116,190. | ||
| Claims priority of application No. 2004-224357 (JP), filed on Jul. 30, 2004. | ||
| Prior Publication US 2006/0024906 A1, Feb. 02, 2006 | ||
| Int. Cl. H01L 27/108 (2006.01) | ||
| U.S. Cl. 257—306 [438/396] | 17 Claims |
| 1. A semiconductor device, comprising:
a semiconductor substrate;
a first electrode over said semiconductor substrate;
a first insulation film covering said first electrode and having an aperture to expose a part of said first electrode;
a first conductive film on said first electrode within said aperture;
an isolation film on said first conductive film;
a second conductive film on said isolation film and connected to said first conductive film; and
a wiring film on said second conductive film.
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