| US 7,465,676 B2 | ||
| Method for forming dielectric film to improve adhesion of low-k film | ||
| Fang Wen Tsai, Hsinchu (Taiwan); I-I Chen, Hsinchu (Taiwan); Zhen-Cheng Wu, Hsinchu (Taiwan); Chih-Lung Lin, Taipei (Taiwan); Tien-I Bao, Hsin-Chu (Taiwan); Shwang-Ming Jeng, Hsin-Chu (Taiwan); and Chen-Hua Yu, Hsin-Chu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Apr. 24, 2006, as Appl. No. 11/409,658. | ||
| Prior Publication US 2007/0249159 A1, Oct. 25, 2007 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—761 [438/637; 438/778; 257/E21.159; 257/E21.16; 257/E21.477; 257/774; 257/760] | 23 Claims |
| 1. A method for forming a semiconductor structure, the method comprising:
providing a semiconductor substrate;
forming a dielectric layer over the semiconductor substrate;
forming an etch stop layer over the dielectric layer;
forming an adhesion layer over and adjacent the etch stop layer using a chemical vapor deposition (CVD) method, wherein the
adhesion layer comprises a transition sub-layer over the dielectric layer, and wherein the transition sub-layer has at least
one characteristic that gradually changes from a lower portion to an upper portion of the transition sub-layer;
forming a low-k dielectric layer on the adhesion layer in-situ with the adhesion layer; and
forming damascene openings in the low-k dielectric layer.
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