| US 7,465,615 B1 | ||
| Polyconductor line end formation and related mask | ||
| Shahid A. Butt, Ossining, N.Y. (US); Allen H. Gabor, Katonah, N.Y. (US); and Donald J. Samuels, Silverthorne, Colo. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Nov. 06, 2007, as Appl. No. 11/935,714. | ||
| Int. Cl. H04L 21/00 (2006.01) | ||
| U.S. Cl. 438—157 [438/592; 257/E21.039] | 1 Claim |
| 1. A method of forming adjacent polyconductor line ends, the method comprising:
forming a polyconductor layer over an isolation region;
forming a mask over the polyconductor layer, the mask including a shape to create the polyconductor line ends and a sub-resolution
correction element to ensure a designed proximity of the polyconductor line ends; and
etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein
the sub-resolution correction element is removed during the etching,
wherein the sub-resolution correction element exists despite any optical proximity correction (OPC), and
wherein the sub-resolution correction element includes an island positioned in an opening between each shape of the mask for
the polyconductor line ends.
|