| US 7,465,478 B2 | ||
| Plasma immersion ion implantation process | ||
| Kenneth S. Collins, San Jose, Calif. (US); Hiroji Hanawa, Sunnyvale, Calif. (US); Kartik Ramaswamy, San Jose, Calif. (US); Andrew Nguyen, San Jose, Calif. (US); Amir Al-Bayati, San Jose, Calif. (US); and Biagio Gallo, Los Gatos, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jan. 28, 2005, as Appl. No. 11/46,660. | ||
| Application 11/046660 is a continuation in part of application No. 10/929104, filed on Aug. 26, 2004, abandoned. | ||
| Application 10/929104 is a continuation in part of application No. 10/838052, filed on May 03, 2004, granted, now 7,223,676. | ||
| Application 10/838052 is a continuation in part of application No. 10/786410, filed on Feb. 24, 2004, granted, now 6,893,907. | ||
| Application 10/786410 is a continuation in part of application No. 10/646533, filed on Aug. 22, 2003. | ||
| Application 10/646533 is a continuation in part of application No. 10/164327, filed on Jun. 05, 2002, granted, now 6,939,434. | ||
| Application 10/164327 is a continuation in part of application No. 09/636435, filed on Aug. 11, 2000, granted, now 6,494,986. | ||
| Prior Publication US 2006/0081558 A1, Apr. 20, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C23C 14/48 (2006.01); B05D 3/06 (2006.01); H05H 1/24 (2006.01); H05H 1/46 (2006.01); H05H 1/02 (2006.01) | ||
| U.S. Cl. 427—523 [427/526; 427/527; 427/530; 427/563; 427/562; 427/564; 427/569; 427/570; 427/578; 427/574; 427/573; 427/534; 427/490; 438/766; 438/906] | 18 Claims |
| 1. A method of processing a workpiece, comprising:
providing a main reactor chamber having a ceiling gas distribution plate facing a wafer support and side gas injectors below
said gas distribution plate, and providing a remote source chamber enclosed separately from the main reactor chamber;
evacuating said main reactor chamber and evacuating said remote source chamber;
placing a wafer on said wafer support in said main chamber and, while said wafer is on said wafer support, providing a plasma
in said main chamber having ions that impinge on said wafer by introducing a process gas through said side gas injectors in
said main reactor chamber and applying RF power to external transverse reentrant conduits having chamber entry ports on opposite
sides of said main reactor chamber, so as to produce an oscillating plasma current in a closed reentrant path that encircles
said gas distribution plate;
increasing dissociation of species in said main reactor chamber independently of said RF power, by generating a remote plasma
in said remote source chamber and introducing through said ceiling gas distribution plate excited radicals from said remote
plasma into said main reactor chamber.
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